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Inventi Impact: VLSI

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  • Inventi:evs/29085/19
    Nano-Particle VO2 Insulator-Metal Transition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope
    Research 2019 : July - September
    Massood Tabib-Azar, Rugved Likhite

    The possibility of controlling the insulator-to-metal transition (IMT) in nano-particle VO2\n(NP-VO2) using the electric field effect in a metal-oxide-VO2 field-effect transistor (MOVFET) at\nroom temperature was investigated for the first time. The IMT induced by current in NP-VO2\nis a function of nano-particle size and was studied first using the conducting atomic force\nmicroscope (cAFM) current-voltage (I-V) measurements. NP-VO2 switching threshold voltage (VT),\nleakage current (Ileakage), and the sub-threshold slope of their conductivity (Sc) were all determined.\nThe cAFM data had a large scatter.However, VT increased as a function of particle height (h)\napproximately as VT(V) = 0.034 h, while I leakage decreased as a function of h approximately as Ileakage\n(A) = 3.4 * 10^-8e^-h/9.1. Thus, an asymptotic leakage current of 34 nA at zero particle size and\na tunneling (carrier) decay constant of..............

    How to Cite this Article
    Attribution/ CC Compliant Citation: Tabib-Azar, Massood, and Rugved Likhite. \"Nano-Particle VO2 Insulator-Metal\nTransition Field-Effect Switch with 42 mV/decade Sub-Threshold Slope.\" Electronics 8.2 (2019): 151.\nhttps://doi:10.3390/electronics8020151\nhttp://creativecommons.org/licenses/by/4.0/\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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